Triode/MOS tube/transistor/module

These N-channel power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias within 3V to 5V, thus enabling true direct switching from logic level (5V) ICs. switching power supply control. The previous development model was TA09870.

The FDMS6673BZ is suitable for minimizing losses in load switching applications. At the same time, it combines the development and progress of silicon and encapsulation technology to provide the lowest RDS(on) and ESD protection.

NPN, Vo=50V, IO=100MA

This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. These MOSFETs switch faster and have lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The MOSFET is thus easier to drive, safer (even at very high frequencies), and the overall efficiency of the DC/DC power supply design is higher.

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