Diode/Bridge Rectifier

Using the Schottky diode potential barrier principle, a large area metal-silicon power diode is used. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system. This encapsulation is also an easy-to-use alternative to the leadless 34 encapsulation style. Due to its small size, it is suitable for portable and battery-operated products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size are critical.

GBU1008, 10A, 800V, MDD, Rectifier bridge

The RHRP8120 is a very fast diode with soft recovery characteristics. It has the half-recovery time of an ultrafast diode and uses a silicon nitride passivation ion-implanted epitaxial planar structure. These devices are suitable as freewheeling/clamping diodes, as well as diodes in various switching power supply and other power switching applications. Its low stored charge and very fast soft recovery minimize ringing and electrical interference in many power switching circuits, reducing power dissipation within switching transistors.

75V, 300mA, trr=4ns, VF=1.25V@150mA, PD=350mW