Diode/Bridge Rectifier

40V, 3A, VF=0.55V@3A

120V, 30A, VF=0.95V@30A

BAS70-F2-0000HF

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs chromium barrier metal, oxide passivation, and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 3A Forward voltage drop (Vf): 0.95V@3A Reverse current (Ir): 5uA@200V Reverse recovery time (trr): 35ns