Diode/Bridge Rectifier

DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 6A Forward voltage drop (Vf): 1V@3A Reverse current (Ir): 5uA@600V Forward surge current (Ifsm): 150A working Temperature: -55℃~+150℃@(Tj)

Using the Schottky diode potential barrier principle, a large area metal-silicon power diode is used. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system. This encapsulation is also an easy-to-use alternative to the leadless 34 encapsulation style. Due to its small size, it is suitable for portable and battery-operated products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size are critical.

100V, 5A, VF=0.85V@5A

Diode configuration: 1 pair of common cathode DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 30A Forward voltage drop (Vf): 950mV@15A

MURS260-F1-0000HF

I(AV) 2 VRRM(V) 400 IFsM(A) 60 VFM(V) 1.25 VFMI(AV)(A) 2 IRM@VRRM(μA) 5 trr(ns) 35