Diode/Bridge Rectifier

The FDMQ8205 is a GreenBridgeTM2 family of quad MOSFETs intended for bridge applications, so the input is insensitive to the polarity of the supply to which the device is connected. Many well-known bridge rectification circuits can be configured using conventional diodes. The power loss of a traditional diode bridge is relatively high, which is undesirable in many applications. This is especially true for Power-over-Ethernet (PoE) powered device (PD) applications that require efficient bridging, as this application operates on the limited power provided by IEEE802.3at class power supply equipment (PSE). The FDMQ8205 is equipped with dual P-channel MOSFETs and N-channel MOSFETs with low rDS(on), thereby reducing power loss due to voltage drop compared to conventional diode bridges. The FDMQ8205 enables applications to maximize available power and voltage, eliminating thermal design concerns in PoE PD applications. The FDMQ8205 GreenBridgeTM2 does not degrade detection and classification requirements and has a small loopback voltage, so it is compatible with the IEEE802.3at PoE standard.

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 70mA Forward voltage drop (Vf): 1V@15mA Reverse current (Ir): 200nA@50V

DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 10A Forward voltage drop (Vf): 1.1V@5A Reverse current (Ir): 5uA@600V Forward surge current (Ifsm): 200A Working temperature: -55℃~+150℃@(Tj)

DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V@500mA Reverse current (Ir): 10uA@600V Forward surge current (Ifsm): 50A Working temperature: -55℃~+150℃

Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode

Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode

BAS716-F2-0000HF