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STW56N65DM2
Product Overview
Category
The STW56N65DM2 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage N-channel enhancement-mode power MOSFET for various electronic applications.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The STW56N65DM2 is typically available in a TO-247 package.
Essence
This MOSFET is essential for power electronics and high-voltage applications.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on supplier and customer requirements.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 56A
- On-Resistance (RDS(on)): 0.065Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STW56N65DM2 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in high-power applications
- Low input capacitance enables fast switching
- Low on-resistance minimizes power loss and heat generation
Advantages and Disadvantages
Advantages
- High voltage capability
- Fast switching speed
- Low on-resistance
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- May require additional circuitry for driving due to higher gate-source voltage
Working Principles
The STW56N65DM2 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The STW56N65DM2 is commonly used in the following applications: - Switched-mode power supplies - Motor control - Inverters - Welding equipment - High-voltage DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the STW56N65DM2 include: - STP60NF06FP - IRFP4668 - FDPF51N25
In conclusion, the STW56N65DM2 is a high-voltage power MOSFET with excellent characteristics suitable for various power electronics applications. Its high voltage capability, fast switching speed, and low on-resistance make it a popular choice for demanding high-power applications.
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Énumérez 10 questions et réponses courantes liées à l'application de STW56N65DM2 dans les solutions techniques
What is the maximum drain-source voltage rating of STW56N65DM2?
- The maximum drain-source voltage rating of STW56N65DM2 is 650V.
What is the continuous drain current rating of STW56N65DM2?
- The continuous drain current rating of STW56N65DM2 is 56A.
What is the on-resistance of STW56N65DM2?
- The on-resistance of STW56N65DM2 is typically 0.038 ohms.
What is the gate threshold voltage of STW56N65DM2?
- The gate threshold voltage of STW56N65DM2 is typically 3V.
What are the typical applications for STW56N65DM2?
- STW56N65DM2 is commonly used in high-power switching applications such as power supplies, motor control, and inverters.
What is the maximum junction temperature of STW56N65DM2?
- The maximum junction temperature of STW56N65DM2 is 150°C.
Does STW56N65DM2 require a heatsink for operation?
- Yes, STW56N65DM2 typically requires a heatsink for efficient heat dissipation.
What is the input capacitance of STW56N65DM2?
- The input capacitance of STW56N65DM2 is typically 3200pF.
Is STW56N65DM2 suitable for use in automotive applications?
- Yes, STW56N65DM2 is suitable for use in automotive applications due to its high voltage and current ratings.
What are the recommended gate driver specifications for STW56N65DM2?
- It is recommended to use a gate driver capable of providing sufficient voltage and current to drive the MOSFET effectively, typically with fast rise and fall times for optimal performance.