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STP4N80K5
Introduction
The STP4N80K5 is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Basic Information Overview
- Category: Semiconductor device
- Use: Power switching applications
- Characteristics: High voltage capability, low input capacitance, fast switching speed
- Package: TO-220
- Essence: Power MOSFET for high voltage applications
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Voltage Rating: 800V
- Current Rating: 4A
- Power Dissipation: 30W
- Operating Temperature Range: -55°C to 150°C
- Gate-Source Voltage (VGS) Threshold: 2-4V
- On-State Resistance (RDS(on)): 1.5Ω
Detailed Pin Configuration
The STP4N80K5 typically has three pins: 1. Gate (G): Input pin for controlling the switching operation 2. Drain (D): Output pin connected to the load 3. Source (S): Ground reference for the MOSFET
Functional Features
- High voltage capability suitable for various power applications
- Low input capacitance enabling fast switching
- Enhanced thermal performance for improved reliability
Advantages and Disadvantages
Advantages
- High voltage rating allows for use in diverse applications
- Low input capacitance results in reduced switching losses
- Enhanced thermal performance ensures reliability under high power conditions
Disadvantages
- Higher on-state resistance compared to some alternative models
- Limited current rating may not be suitable for high-power applications
Working Principles
The STP4N80K5 operates based on the principle of field-effect transistors. When a sufficient gate-source voltage is applied, it allows current to flow between the drain and source terminals, effectively acting as a switch for power control applications.
Detailed Application Field Plans
The STP4N80K5 is commonly used in the following applications: - Switched-mode power supplies - Motor control systems - Lighting ballasts - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the STP4N80K5 include: - IRF840: Similar voltage and current ratings - FQP27P06: Lower on-state resistance for higher efficiency - STP6NK90Z: Higher current rating for more demanding applications
In conclusion, the STP4N80K5 is a power MOSFET with specific characteristics and applications. Understanding its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models is crucial for effective utilization in various electronic circuits and systems.
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Énumérez 10 questions et réponses courantes liées à l'application de STP4N80K5 dans les solutions techniques
What is STP4N80K5?
- STP4N80K5 is a power MOSFET transistor designed for high-voltage, high-speed switching applications.
What are the key features of STP4N80K5?
- The key features of STP4N80K5 include a high voltage capability, low input capacitance, and fast switching speed.
What are the typical applications of STP4N80K5?
- Typical applications of STP4N80K5 include power supplies, motor control, lighting ballasts, and electronic ballasts.
What is the maximum voltage rating of STP4N80K5?
- The maximum voltage rating of STP4N80K5 is 800V.
What is the on-state resistance of STP4N80K5?
- The on-state resistance of STP4N80K5 is typically around 4 ohms.
What is the maximum drain current of STP4N80K5?
- The maximum drain current of STP4N80K5 is typically around 4A.
Does STP4N80K5 require a heat sink for operation?
- It is recommended to use a heat sink for STP4N80K5 in high-power applications to ensure proper thermal management.
Is STP4N80K5 suitable for automotive applications?
- Yes, STP4N80K5 can be used in automotive applications such as electronic control units (ECUs) and motor drives.
What are the thermal characteristics of STP4N80K5?
- STP4N80K5 has low thermal resistance and is designed for efficient heat dissipation.
Are there any specific layout considerations for using STP4N80K5 in a circuit?
- It is important to minimize parasitic inductance and ensure proper gate driving to optimize the performance of STP4N80K5 in a circuit.