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STP11NK40Z

STP11NK40Z

Product Overview

Category

The STP11NK40Z belongs to the category of power MOSFETs.

Use

It is commonly used as a switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The STP11NK40Z is typically available in a TO-220 package.

Essence

This MOSFET is essential for controlling high-power loads in electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on supplier and customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 400V
  • Continuous Drain Current (ID): 11A
  • On-Resistance (RDS(on)): 0.5Ω
  • Power Dissipation (PD): 40W
  • Gate-Source Voltage (VGS): ±30V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STP11NK40Z has a standard pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • High voltage capability allows it to handle large loads.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power loss and heat generation.

Advantages

  • Suitable for high-power applications
  • Fast switching speed
  • Low power dissipation

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful handling due to its high voltage capability

Working Principles

The STP11NK40Z operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STP11NK40Z is widely used in: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the STP11NK40Z include: - IRF840 - FQP50N06 - IRL540

In conclusion, the STP11NK40Z power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for various high-power electronic applications.

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Énumérez 10 questions et réponses courantes liées à l'application de STP11NK40Z dans les solutions techniques

  1. What is the STP11NK40Z?

    • The STP11NK40Z is a power MOSFET designed for high-speed switching applications.
  2. What is the maximum voltage and current rating of the STP11NK40Z?

    • The maximum voltage rating is 400V, and the maximum continuous drain current is 11A.
  3. What are the typical applications of the STP11NK40Z?

    • The STP11NK40Z is commonly used in applications such as switch mode power supplies, motor control, and lighting ballasts.
  4. What is the on-state resistance (RDS(on)) of the STP11NK40Z?

    • The typical on-state resistance of the STP11NK40Z is 0.45 ohms.
  5. Is the STP11NK40Z suitable for high-frequency switching applications?

    • Yes, the STP11NK40Z is designed for high-speed switching applications, making it suitable for high-frequency operation.
  6. Does the STP11NK40Z require a heat sink for thermal management?

    • It is recommended to use a heat sink to manage the thermal dissipation of the STP11NK40Z, especially in high-power applications.
  7. What is the gate-source threshold voltage of the STP11NK40Z?

    • The gate-source threshold voltage typically ranges from 2V to 4V.
  8. Can the STP11NK40Z be used in automotive applications?

    • Yes, the STP11NK40Z is suitable for automotive applications, provided it meets the specific requirements and standards for automotive electronics.
  9. Are there any recommended driver ICs for driving the STP11NK40Z?

    • Various manufacturers offer driver ICs specifically designed for driving MOSFETs like the STP11NK40Z, such as IRF, Infineon, and Texas Instruments.
  10. What are the key parameters to consider when designing a circuit with the STP11NK40Z?

    • Key parameters to consider include voltage and current requirements, thermal management, gate drive voltage, and switching frequency. Additionally, attention should be given to layout considerations for minimizing parasitic effects.