STH110N8F7-2: Product Overview and Analysis

Introduction

The STH110N8F7-2 is a high-performance power MOSFET designed for various applications in the electronics industry. This entry provides a comprehensive overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The STH110N8F7-2 is utilized in power management applications, such as motor control, lighting systems, and DC-DC converters.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The STH110N8F7-2 is available in a TO-220 package, providing robustness and thermal performance.
• Essence: Its essence lies in delivering efficient power management solutions with minimal losses.
• Packaging/Quantity: It is typically supplied in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Voltage Rating: 80V
• Current Rating: 110A
• On-State Resistance (RDS(on)): 4.7mΩ
• Gate Charge (Qg): 38nC
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-220

Detailed Pin Configuration

The STH110N8F7-2 features a standard TO-220 pin configuration with three pins: 1. Gate (G): Input for controlling the switching behavior of the MOSFET. 2. Drain (D): Connects to the load and serves as the output terminal. 3. Source (S): Connected to the ground or return path of the circuit.

Functional Features

• High Efficiency: The MOSFET's low on-state resistance contributes to minimal conduction losses, enhancing overall efficiency.
• Fast Switching: It offers rapid switching characteristics, enabling high-frequency operation in power electronics applications.
• Robustness: With its TO-220 package, the device ensures reliable thermal performance and mechanical strength.

Advantages and Disadvantages

Advantages

• High efficiency and power density
• Fast switching speed
• Robust packaging for thermal dissipation

Disadvantages

• Higher cost compared to standard MOSFETs
• Requires careful consideration of drive circuitry due to high gate charge

Working Principles

The STH110N8F7-2 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow in various electronic circuits.

Detailed Application Field Plans

The STH110N8F7-2 finds extensive use in the following application fields: - Motor Control Systems: Enables precise and efficient control of electric motors in industrial and automotive applications. - Lighting Systems: Facilitates high-efficiency power management in LED lighting fixtures and other illumination systems. - DC-DC Converters: Supports the conversion of power between different voltage levels with minimal losses.

Detailed and Complete Alternative Models

For applications requiring similar performance characteristics, alternative models to the STH110N8F7-2 include: - Infineon IPP110N08N3 G - STMicroelectronics STL110N8F7-2 - ON Semiconductor NTD110N8F7T4G

In conclusion, the STH110N8F7-2 stands as a versatile and high-performance power MOSFET, catering to diverse power management needs across multiple industries.

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