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STF23N80K5

STF23N80K5 - Product Overview and Analysis

Introduction

STF23N80K5 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Power switching applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-220
  • Essence: Efficient power management
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 800V
  • Current Rating: 23A
  • On-Resistance: 0.08 ohms
  • Gate Threshold Voltage: 3V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STF23N80K5 features a standard TO-220 pin configuration with three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Output terminal for the load 3. Source (S): Common terminal

Functional Features

  • High voltage capability suitable for various power applications
  • Low on-resistance leading to reduced power dissipation
  • Fast switching speed enabling efficient power management

Advantages and Disadvantages

Advantages

  • High voltage rating allows for versatile application usage
  • Low on-resistance results in minimal power loss
  • Fast switching speed enhances overall efficiency

Disadvantages

  • Higher cost compared to standard MOSFETs with lower specifications
  • Sensitive to static discharge, requiring careful handling during installation

Working Principles

STF23N80K5 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

STF23N80K5 finds extensive use in the following applications: - Switching power supplies - Motor control systems - Inverters and converters - Electronic ballasts - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to STF23N80K5 include: - IRFP4668PbF - FDPF33N25T - IXFH24N100Q

In conclusion, STF23N80K5 is a high-performance power MOSFET with excellent voltage and current handling capabilities, making it suitable for a wide range of power electronics applications.

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Énumérez 10 questions et réponses courantes liées à l'application de STF23N80K5 dans les solutions techniques

  1. What is the maximum drain-source voltage rating of STF23N80K5?

    • The maximum drain-source voltage rating of STF23N80K5 is 800V.
  2. What is the typical on-state resistance of STF23N80K5?

    • The typical on-state resistance of STF23N80K5 is 0.23 ohms.
  3. What is the maximum continuous drain current of STF23N80K5?

    • The maximum continuous drain current of STF23N80K5 is 23A.
  4. Can STF23N80K5 be used in high-frequency switching applications?

    • Yes, STF23N80K5 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
  5. Is STF23N80K5 suitable for use in power supplies?

    • Yes, STF23N80K5 is commonly used in power supply applications due to its high voltage rating and low on-state resistance.
  6. What are the typical thermal characteristics of STF23N80K5?

    • The typical thermal resistance from junction to case (Rthj-c) of STF23N80K5 is 1.25°C/W.
  7. Does STF23N80K5 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal thermal performance of STF23N80K5.
  8. Can STF23N80K5 be used in automotive applications?

    • Yes, STF23N80K5 is suitable for automotive applications such as motor control and power management.
  9. What are the recommended gate drive voltage levels for STF23N80K5?

    • The recommended gate drive voltage for STF23N80K5 is typically around 10V to ensure proper switching behavior.
  10. Are there any specific layout considerations when using STF23N80K5 in a circuit?

    • It is important to minimize parasitic inductance and ensure proper thermal management when designing the layout for STF23N80K5 in a circuit.