The STB9NK50ZT4 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in electronic circuits for its high voltage and current handling capabilities, making it suitable for various applications. The STB9NK50ZT4 possesses specific characteristics, packaging, and essential features that make it a valuable component in electronic design.
The STB9NK50ZT4 features the following specifications: - Drain-Source Voltage (VDSS): 500V - Continuous Drain Current (ID): 9A - On-state Resistance (RDS(on)): 1.15Ω - Power Dissipation (PTOT): 80W - Operating Temperature Range: -55°C to 150°C
The pin configuration of the STB9NK50ZT4 is as follows: - Pin 1: Gate (G) - Pin 2: Drain (D) - Pin 3: Source (S)
The functional features of the STB9NK50ZT4 include: - High voltage capability - Low input and output capacitance - Fast switching speed - Avalanche energy specified
The STB9NK50ZT4 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow within electronic circuits.
The STB9NK50ZT4 finds extensive use in various application fields, including: - Switching power supplies - Motor control - Electronic ballasts - Inverters - LED lighting
Some alternative models to the STB9NK50ZT4 include: - STB8NK80Z - STB5NK60ZT4 - STB12NK60ZT4 - IRF840 - IRF540
In conclusion, the STB9NK50ZT4 is a versatile power MOSFET with high voltage and current capabilities, making it suitable for diverse electronic applications. Its functional features, advantages, and detailed application field plans highlight its significance in modern electronic designs.
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