The STB28N65M2 is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
The STB28N65M2 features a standard TO-263-3 package with three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Connects to the load and external circuitry 3. Source (S): Connected to the ground reference
The STB28N65M2 operates based on the principle of field-effect transistors, where the gate voltage controls the conductivity between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows current to flow through, enabling power switching functions.
The STB28N65M2 finds extensive use in various power management applications, including but not limited to: - Switched-mode power supplies - Motor control systems - Inverters and converters - Electronic ballasts - LED lighting systems
Some alternative models to the STB28N65M2 include: - IRF2807 - FDPF33N25T - IXFN38N100Q2
In conclusion, the STB28N65M2 offers high voltage capability, low input capacitance, and fast switching speed, making it suitable for diverse power management applications. While it has certain limitations, its functional features and specifications position it as a reliable choice for various electronic designs.
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What is the maximum drain-source voltage of STB28N65M2?
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What is the on-resistance of STB28N65M2?
Can STB28N65M2 be used in high-power applications?
What type of package does STB28N65M2 come in?
Is STB28N65M2 suitable for switching applications?
What is the gate threshold voltage of STB28N65M2?
Does STB28N65M2 require a heat sink for operation?
What is the typical input capacitance of STB28N65M2?
Can STB28N65M2 be used in automotive applications?