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STB12NM50FDT4
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STB12NM50FDT4

Product Overview

Category

The STB12NM50FDT4 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage N-channel enhancement-mode power MOSFET for various electronic applications.

Characteristics

  • High voltage capability
  • Low input and output capacitance
  • Fast switching speed
  • Low on-resistance
  • Avalanche ruggedness

Package

The STB12NM50FDT4 is available in a TO-220 package.

Essence

The essence of the STB12NM50FDT4 lies in its ability to efficiently control high voltages in electronic circuits.

Packaging/Quantity

The STB12NM50FDT4 is typically packaged in reels or tubes, with varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 12A
  • On-Resistance (RDS(on)): 0.5Ω
  • Power Dissipation (PD): 80W
  • Gate-Source Voltage (VGS): ±30V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STB12NM50FDT4 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in high-power applications
  • Low input and output capacitance enables fast switching
  • Low on-resistance minimizes power loss and heat generation
  • Avalanche ruggedness ensures reliability under high-stress conditions

Advantages and Disadvantages

Advantages

  • Suitable for high-voltage applications
  • Fast switching speed
  • Low power dissipation

Disadvantages

  • Relatively higher on-resistance compared to some alternative models
  • Limited operating temperature range

Working Principles

The STB12NM50FDT4 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STB12NM50FDT4 is commonly used in: - Switching power supplies - Motor control - Lighting ballasts - Electronic ballasts - Inverters

Detailed and Complete Alternative Models

Some alternative models to the STB12NM50FDT4 include: - STP12NM50FP - STB10NK60ZT4 - STB16N65M5

In conclusion, the STB12NM50FDT4 is a high-voltage power MOSFET with fast switching speed and low on-resistance, making it suitable for various electronic applications, especially those requiring efficient control of high voltages.

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Énumérez 10 questions et réponses courantes liées à l'application de STB12NM50FDT4 dans les solutions techniques

  1. What is the maximum drain-source voltage of STB12NM50FDT4?

    • The maximum drain-source voltage of STB12NM50FDT4 is 500V.

  2. What is the continuous drain current rating of STB12NM50FDT4?

    • The continuous drain current rating of STB12NM50FDT4 is 12A.

  3. What is the on-state resistance (RDS(on)) of STB12NM50FDT4?

    • The on-state resistance (RDS(on)) of STB12NM50FDT4 is typically 0.38 ohms.

  4. What is the gate threshold voltage of STB12NM50FDT4?

    • The gate threshold voltage of STB12NM50FDT4 is typically 3V.

  5. Is STB12NM50FDT4 suitable for high-frequency switching applications?

    • Yes, STB12NM50FDT4 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.

  6. What are the typical applications for STB12NM50FDT4?

    • Typical applications for STB12NM50FDT4 include power supplies, motor control, lighting, and other high-power switching applications.

  7. Does STB12NM50FDT4 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of STB12NM50FDT4.

  8. What is the operating temperature range of STB12NM50FDT4?

    • The operating temperature range of STB12NM50FDT4 is typically -55°C to 150°C.

  9. Can STB12NM50FDT4 be used in automotive applications?

    • Yes, STB12NM50FDT4 is suitable for automotive applications, such as in electric vehicle systems and automotive power electronics.

  10. Are there any recommended driver ICs for driving STB12NM50FDT4?

    • Recommended driver ICs for driving STB12NM50FDT4 include MOSFET gate drivers with appropriate voltage and current ratings to ensure efficient switching and protection.