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2SB1427T100E
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current gain, low noise, and high frequency capability - Package: TO-220F - Essence: NPN silicon epitaxial planar transistor - Packaging/Quantity: Typically sold in reels of 1000 units
Specifications: - Collector-Base Voltage (Vcbo): 120V - Collector-Emitter Voltage (Vceo): 120V - Emitter-Base Voltage (Vebo): 5V - Collector Current (Ic): 3A - Power Dissipation (Pd): 25W - Transition Frequency (ft): 30MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Collector (C): Pin 1 - Base (B): Pin 2 - Emitter (E): Pin 3
Functional Features: - High current gain for amplification applications - Low noise characteristics suitable for audio amplifiers - High frequency capability for RF applications
Advantages: - High current gain allows for small base current drive - Low noise makes it suitable for audio applications - High frequency capability enables use in RF circuits
Disadvantages: - Limited power dissipation compared to some other transistors - Moderate operating temperature range
Working Principles: The 2SB1427T100E operates as a current-controlled switch or amplifier. When a small current flows into the base terminal, it controls a much larger current between the collector and emitter terminals, allowing for signal amplification or digital switching.
Detailed Application Field Plans: - Audio amplifiers - RF amplifiers - Switching circuits
Detailed and Complete Alternative Models: - 2N3904 - BC547 - 2SC5200
This comprehensive entry provides an in-depth understanding of the 2SB1427T100E transistor, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
Énumérez 10 questions et réponses courantes liées à l'application de 2SB1427T100E dans les solutions techniques
Sure, here are 10 common questions and answers related to the application of 2SB1427T100E in technical solutions:
What is the maximum collector current of 2SB1427T100E?
- The maximum collector current of 2SB1427T100E is 3A.
What is the maximum collector-emitter voltage of 2SB1427T100E?
- The maximum collector-emitter voltage of 2SB1427T100E is 120V.
What type of transistor is 2SB1427T100E?
- 2SB1427T100E is a PNP silicon epitaxial planar transistor designed for audio amplifier applications.
What are the typical applications of 2SB1427T100E?
- Typical applications of 2SB1427T100E include audio amplification, voltage regulation, and power switching circuits.
What is the power dissipation of 2SB1427T100E?
- The power dissipation of 2SB1427T100E is 1W.
What is the maximum junction temperature of 2SB1427T100E?
- The maximum junction temperature of 2SB1427T100E is 150°C.
Does 2SB1427T100E require a heat sink for operation?
- Yes, 2SB1427T100E may require a heat sink depending on the specific application and operating conditions.
Is 2SB1427T100E suitable for high-frequency applications?
- No, 2SB1427T100E is not typically recommended for high-frequency applications due to its design and characteristics.
What are the key parameters to consider when designing with 2SB1427T100E?
- Key parameters to consider include collector current, collector-emitter voltage, power dissipation, and thermal management.
Can 2SB1427T100E be used in automotive electronics applications?
- Yes, 2SB1427T100E can be used in certain automotive electronics applications where its specifications and characteristics meet the requirements.
I hope these questions and answers provide helpful information about the application of 2SB1427T100E in technical solutions. Let me know if you need further assistance!