ON Semiconductor
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
NJVMJD3055T4G
Voir les détails DataSheets

NJVMJD3055T4G

Product Overview

Category

The NJVMJD3055T4G belongs to the category of power MOSFETs.

Use

It is commonly used as a switching device in electronic circuits, particularly in power supply and motor control applications.

Characteristics

  • Low on-state resistance
  • High input impedance
  • Fast switching speed
  • Low gate drive power
  • High power dissipation capability

Package

The NJVMJD3055T4G is typically available in a TO-252 package.

Essence

The essence of this product lies in its ability to efficiently control high currents and voltages in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 10A
  • RDS(ON) (Max) @ VGS = 10V: 0.115Ω
  • Input Capacitance (Ciss) @ VDS = 25V: 700pF
  • Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The NJVMJD3055T4G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • Minimal switching losses
  • Enhanced thermal performance
  • High reliability and ruggedness

Advantages

  • Efficient power management
  • Reduced heat generation
  • Improved system reliability
  • Compact design possibilities

Disadvantages

  • Sensitivity to electrostatic discharge (ESD)
  • Limited voltage and current handling compared to some higher-rated devices

Working Principles

The NJVMJD3055T4G operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is widely used in: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems - Inverter and converter designs

Detailed and Complete Alternative Models

Some alternative models to the NJVMJD3055T4G include: - IRF3205 - FQP30N06L - STP55NF06L - IRL540

In conclusion, the NJVMJD3055T4G power MOSFET offers efficient power management and reliable performance in various electronic applications, making it a popular choice for designers seeking high-performance switching devices.

[Word count: 366]

Énumérez 10 questions et réponses courantes liées à l'application de NJVMJD3055T4G dans les solutions techniques

  1. What is NJVMJD3055T4G?

    • NJVMJD3055T4G is a NPN Bipolar Junction Transistor (BJT) designed for general purpose amplifier and switching applications.

  2. What are the key features of NJVMJD3055T4G?

    • The key features include high current capability, low collector-emitter saturation voltage, and complementary PNP type available (NJVMJD2955T4G).

  3. What are the typical applications of NJVMJD3055T4G?

    • Typical applications include power linear and switching, motor control, and audio amplification.

  4. What is the maximum collector current of NJVMJD3055T4G?

    • The maximum collector current is 10A.

  5. What is the maximum collector-emitter voltage of NJVMJD3055T4G?

    • The maximum collector-emitter voltage is 60V.

  6. What is the thermal resistance of NJVMJD3055T4G?

    • The thermal resistance is 1.67°C/W.

  7. Is NJVMJD3055T4G RoHS compliant?

    • Yes, NJVMJD3055T4G is RoHS compliant.

  8. What is the operating temperature range of NJVMJD3055T4G?

    • The operating temperature range is -55°C to 150°C.

  9. Does NJVMJD3055T4G require external heat sinking?

    • It depends on the application, but for high-power applications, external heat sinking may be necessary.

  10. Is there a recommended circuit configuration for using NJVMJD3055T4G in a switching application?

    • A common recommended configuration is to use it as a high-side switch with appropriate base drive and protection circuitry.