Micron Technology Inc.
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MT53B384M64D4NK-062 WT ES:B TR

MT53B384M64D4NK-062 WT ES:B TR

Product Overview

Category

The MT53B384M64D4NK-062 WT ES:B TR belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High storage capacity: The MT53B384M64D4NK-062 WT ES:B TR offers a large storage capacity, allowing users to store a significant amount of data.
  • Fast data transfer rate: With its advanced technology, this product enables high-speed data transfer, ensuring efficient performance.
  • Reliable and durable: Designed with robust materials and components, the MT53B384M64D4NK-062 WT ES:B TR ensures long-lasting reliability.

Package

The MT53B384M64D4NK-062 WT ES:B TR comes in a compact package that is compatible with standard electronic device interfaces.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity data storage, enhancing the overall functionality of electronic devices.

Packaging/Quantity

Each package of the MT53B384M64D4NK-062 WT ES:B TR contains one unit of the memory device.

Specifications

  • Model: MT53B384M64D4NK-062 WT ES:B TR
  • Memory Type: Non-volatile
  • Capacity: 384 megabytes (MB)
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 3.3 volts (V)
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 100 megabits per second (Mbps)

Detailed Pin Configuration

The MT53B384M64D4NK-062 WT ES:B TR has the following pin configuration:

  1. VCC: Power supply voltage
  2. GND: Ground connection
  3. CS: Chip select for SPI communication
  4. SCK: Serial clock for SPI communication
  5. SI: Serial data input for SPI communication
  6. SO: Serial data output for SPI communication

Functional Features

  • High-speed data transfer: The MT53B384M64D4NK-062 WT ES:B TR offers fast data transfer rates, enabling quick access to stored information.
  • Low power consumption: This memory device is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Error correction: The product incorporates error correction techniques to ensure data integrity and reliability.
  • Write protection: The MT53B384M64D4NK-062 WT ES:B TR includes write protection features to prevent accidental data modification.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable and durable design
  • Low power consumption

Disadvantages

  • Limited compatibility with certain older device interfaces
  • Relatively higher cost compared to lower-capacity memory options

Working Principles

The MT53B384M64D4NK-062 WT ES:B TR operates based on the principles of non-volatile memory technology. It utilizes a combination of electronic circuits and semiconductor materials to store and retrieve digital data.

Detailed Application Field Plans

The MT53B384M64D4NK-062 WT ES:B TR can be used in various applications, including: 1. Personal computers 2. Laptops and notebooks 3. Smartphones and tablets 4. Digital cameras 5. Gaming consoles

Detailed and Complete Alternative Models

  1. MT53B256M32D2NK-062 WT ES:B TR
  2. MT53B512M128D8NK-062 WT ES:B TR
  3. MT53B1024M256D16NK-062 WT ES:B TR
  4. MT53B2048M512D32NK-062 WT ES:B TR

These alternative models offer different storage capacities and may have varying specifications to cater to diverse user requirements.

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Énumérez 10 questions et réponses courantes liées à l'application de MT53B384M64D4NK-062 WT ES:B TR dans les solutions techniques

1. What is the MT53B384M64D4NK-062 WT ES:B TR?

The MT53B384M64D4NK-062 WT ES:B TR is a specific model of memory module commonly used in technical solutions.

2. What is the capacity of the MT53B384M64D4NK-062 WT ES:B TR?

The MT53B384M64D4NK-062 WT ES:B TR has a capacity of 384 megabytes (MB).

3. What type of memory technology does the MT53B384M64D4NK-062 WT ES:B TR use?

The MT53B384M64D4NK-062 WT ES:B TR uses DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) technology.

4. What is the operating voltage of the MT53B384M64D4NK-062 WT ES:B TR?

The operating voltage of the MT53B384M64D4NK-062 WT ES:B TR is 1.2 volts.

5. What is the clock speed of the MT53B384M64D4NK-062 WT ES:B TR?

The MT53B384M64D4NK-062 WT ES:B TR has a clock speed of 1600 MHz.

6. What is the form factor of the MT53B384M64D4NK-062 WT ES:B TR?

The MT53B384M64D4NK-062 WT ES:B TR has a Small Outline Dual In-Line Memory Module (SO-DIMM) form factor.

7. Is the MT53B384M64D4NK-062 WT ES:B TR compatible with my device?

To determine compatibility, please check your device's specifications and ensure it supports DDR4 SO-DIMM memory modules.

8. Can I upgrade my existing memory with the MT53B384M64D4NK-062 WT ES:B TR?

If your device supports DDR4 SO-DIMM memory modules and has an available slot, you can upgrade your existing memory with the MT53B384M64D4NK-062 WT ES:B TR.

9. What are the temperature and operating conditions for the MT53B384M64D4NK-062 WT ES:B TR?

The MT53B384M64D4NK-062 WT ES:B TR operates within a temperature range of 0°C to 85°C.

10. Does the MT53B384M64D4NK-062 WT ES:B TR come with any warranty?

Warranty terms may vary depending on the manufacturer or seller. Please refer to the product documentation or contact the manufacturer/seller for warranty information specific to the MT53B384M64D4NK-062 WT ES:B TR.