MT29F32G08CBADBWPR:D

Product Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity (32GB)
  • NAND Flash technology
• Package: BGA (Ball Grid Array)
• Essence: Reliable and high-performance data storage solution
• Packaging/Quantity: Individual units in anti-static packaging

Specifications

• Memory Type: NAND Flash
• Capacity: 32GB
• Interface: Parallel
• Supply Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (Read), Up to 100MB/s (Write)

Detailed Pin Configuration

The MT29F32G08CBADBWPR:D has a total of 48 pins arranged in a specific configuration. The pinout is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. RE#
35. WE#
36. CLE
37. ALE
38. CE#
39. R/B#
40. WP#
41. NC
42. NC
43. NC
44. NC
45. NC
46. GND
47. NC
48. NC

Functional Features

• High-speed data transfer
• Reliable and durable NAND Flash technology
• Error correction and wear-leveling algorithms for enhanced reliability
• Support for various memory management techniques
• Low power consumption
• Wide operating temperature range

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rate - High reliability and durability - Low power consumption - Suitable for a wide range of applications

Disadvantages: - Higher cost compared to other memory options - Limited write endurance

Working Principles

The MT29F32G08CBADBWPR:D utilizes NAND Flash technology to store and retrieve data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The device uses a combination of electrical charges and transistors to represent and manipulate data.

When data is written to the memory, the appropriate voltages are applied to the specific memory cells, altering their charge levels. Reading data involves sensing the charge levels of the cells and converting them back into digital information.

Detailed Application Field Plans

The MT29F32G08CBADBWPR:D is widely used in various electronic devices and systems that require reliable and high-capacity data storage. Some common application fields include:

1. Solid-State Drives (SSDs)
2. Embedded Systems
3. Industrial Automation
4. Automotive Electronics
5. Consumer Electronics
6. Medical Devices
7. Networking Equipment

Detailed and Complete Alternative Models

1. MT29F32G08CBADAWP:D
2. MT29F32G08CBADBWPD
3. MT29F32G08CBADAWP:G
4. MT29F32G08CBADBWPG
5. MT29F32G08CBADAWP:R
6. MT29F32G08CBADBWPR

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable memory device for specific applications.

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