Micron Technology Inc.
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MT29F2G01ABAGDWB-IT:G

MT29F2G01ABAGDWB-IT:G

Product Overview

Category

MT29F2G01ABAGDWB-IT:G belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Compact size
  • Low power consumption

Package

The MT29F2G01ABAGDWB-IT:G is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

The MT29F2G01ABAGDWB-IT:G is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

  • Storage Capacity: 2GB
  • Interface: NAND
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 200MB/s (read), up to 100MB/s (write)

Detailed Pin Configuration

The MT29F2G01ABAGDWB-IT:G has a standard pin configuration for NAND flash memory chips. The pins are as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip enable
  4. RE: Read enable
  5. WE: Write enable
  6. A0-A18: Address inputs
  7. DQ0-DQ15: Data inputs/outputs
  8. R/B: Ready/Busy status
  9. CLE: Command latch enable
  10. ALE: Address latch enable

Functional Features

  • Page Program Operation: Allows data to be written in page-sized increments.
  • Block Erase Operation: Enables the erasure of entire blocks of data.
  • Random Access: Provides fast access to specific data within the memory.
  • Wear-Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for ample data storage.
  • Fast read and write speeds enhance overall system performance.
  • Non-volatile memory retains data even when power is disconnected.
  • Compact size enables integration into small electronic devices.
  • Low power consumption prolongs battery life.

Disadvantages

  • Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
  • Cost: NAND flash memory can be relatively expensive compared to other types of memory.

Working Principles

The MT29F2G01ABAGDWB-IT:G utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing data involves applying a high voltage to the gate to modify the charge level.

Detailed Application Field Plans

The MT29F2G01ABAGDWB-IT:G is widely used in various applications, including: - Smartphones and tablets for storing operating systems, apps, and user data. - Digital cameras for storing photos and videos. - Solid-state drives (SSDs) for high-speed data storage in computers and servers. - Automotive electronics for data logging and infotainment systems. - Industrial equipment for storing firmware and configuration data.

Detailed and Complete Alternative Models

  • MT29F2G08ABAEAWP-IT:G
  • MT29F2G16ABDWP-IT:G
  • MT29F2G32ABDEAWP-IT:G
  • MT29F2G64ABDEAWP-IT:G

These alternative models offer similar storage capacities and functionality, but may differ in package type, voltage range, or other specifications.

Énumérez 10 questions et réponses courantes liées à l'application de MT29F2G01ABAGDWB-IT:G dans les solutions techniques

1. What is the MT29F2G01ABAGDWB-IT:G?

The MT29F2G01ABAGDWB-IT:G is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the capacity of the MT29F2G01ABAGDWB-IT:G?

The MT29F2G01ABAGDWB-IT:G has a capacity of 2 gigabytes (GB).

3. What is the interface used by the MT29F2G01ABAGDWB-IT:G?

The MT29F2G01ABAGDWB-IT:G uses a parallel interface for data transfer.

4. What voltage does the MT29F2G01ABAGDWB-IT:G operate at?

The MT29F2G01ABAGDWB-IT:G operates at a voltage of 3.3 volts (V).

5. Can the MT29F2G01ABAGDWB-IT:G be used in industrial applications?

Yes, the MT29F2G01ABAGDWB-IT:G is suitable for use in industrial applications due to its robust design and reliability.

6. Is the MT29F2G01ABAGDWB-IT:G compatible with various operating systems?

Yes, the MT29F2G01ABAGDWB-IT:G is compatible with different operating systems, including Windows, Linux, and embedded systems.

7. What is the maximum read speed of the MT29F2G01ABAGDWB-IT:G?

The MT29F2G01ABAGDWB-IT:G has a maximum read speed of up to 50 megabytes per second (MB/s).

8. Can the MT29F2G01ABAGDWB-IT:G withstand extreme temperatures?

Yes, the MT29F2G01ABAGDWB-IT:G is designed to operate reliably in a wide temperature range, including extreme temperatures.

9. Does the MT29F2G01ABAGDWB-IT:G support wear-leveling algorithms?

Yes, the MT29F2G01ABAGDWB-IT:G supports wear-leveling algorithms to ensure even distribution of data writes and prolong the lifespan of the memory.

10. Can the MT29F2G01ABAGDWB-IT:G be used in automotive applications?

Yes, the MT29F2G01ABAGDWB-IT:G is suitable for use in automotive applications due to its high reliability and ability to withstand harsh environments.