MT29F1T208ECHBBJ4-3R:B

Product Overview

Category

MT29F1T208ECHBBJ4-3R:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F1T208ECHBBJ4-3R:B offers a large storage capacity, ranging from several gigabytes to terabytes.
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Non-volatile memory: The data stored in this NAND flash memory remains intact even when power is turned off.
• Compact package: MT29F1T208ECHBBJ4-3R:B comes in a small form factor, making it suitable for space-constrained devices.
• Reliable performance: This product ensures reliable and consistent performance over an extended period.

Package and Quantity

MT29F1T208ECHBBJ4-3R:B is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands per package.

Specifications

• Storage Capacity: Varies (e.g., 16GB, 32GB, 64GB)
• Interface: NAND Flash interface
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read/Write Speed: Depends on specific model
• Data Retention: Up to 10 years

Detailed Pin Configuration

The pin configuration of MT29F1T208ECHBBJ4-3R:B may vary depending on the specific manufacturer. However, a typical pin configuration includes the following:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. WE: Write Enable
7. RE: Read Enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data Input/Output lines
10. WP: Write Protect

Functional Features

• High-speed data transfer: MT29F1T208ECHBBJ4-3R:B offers fast read and write speeds, allowing for efficient data access and storage.
• Error correction: This NAND flash memory incorporates error correction techniques to ensure data integrity and reliability.
• Wear leveling: The product employs wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: It includes mechanisms to identify and manage defective blocks, preventing data loss and maintaining overall performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Compact form factor
• Non-volatile memory
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Higher cost per gigabyte compared to traditional hard disk drives (HDDs)

Working Principles

MT29F1T208ECHBBJ4-3R:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the controller sends commands and addresses to the memory, enabling the transfer of data between the host device and the NAND flash memory.

Detailed Application Field Plans

MT29F1T208ECHBBJ4-3R:B finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP-IT: 1Gb NAND Flash Memory
• MT29F2G08ABAEAWP-IT: 2Gb NAND Flash Memory
• MT29F4G08ABAEAWP-IT: 4Gb NAND Flash Memory
• MT29F8G08ABACAWP-IT: 8Gb NAND Flash Memory
• MT29F16G08CBACAWP-IT: 16Gb NAND Flash Memory

These alternative models offer varying storage capacities to suit different application requirements.

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