MT29F1T08CMHBBJ4-3R:B

Product Overview

Category

MT29F1T08CMHBBJ4-3R:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Low power consumption
• Compact size

Package

MT29F1T08CMHBBJ4-3R:B is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

MT29F1T08CMHBBJ4-3R:B is typically packaged in trays or reels, with each package containing a specific quantity of chips depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Terabit (128 Gigabytes)
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 Megabytes/s (Read), Up to 200 Megabytes/s (Write)

Detailed Pin Configuration

The pin configuration of MT29F1T08CMHBBJ4-3R:B is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip Enable
4. RE# - Read Enable
5. WE# - Write Enable
6. CLE - Command Latch Enable
7. ALE - Address Latch Enable
8. WP# - Write Protect
9. R/B# - Ready/Busy
10. DQ0-DQ15 - Data Input/Output

Functional Features

• Error Correction Code (ECC) for data integrity
• Wear-leveling algorithm for even distribution of write cycles
• Bad block management for efficient use of memory space
• Block erase and page program operations for data manipulation
• Read and write protection features for data security

Advantages and Disadvantages

Advantages

• High-speed data transfer enables quick access to stored information.
• Large storage capacity allows for the storage of a vast amount of data.
• Low power consumption prolongs battery life in portable devices.
• Compact size facilitates integration into small electronic devices.

Disadvantages

• Limited endurance due to a finite number of write cycles.
• Relatively higher cost compared to other types of memory.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

MT29F1T08CMHBBJ4-3R:B utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the voltage levels applied to it. The memory cells are arranged in blocks, and data is written or read at the page level within these blocks. The controller manages the data transfer between the host device and the NAND flash memory, ensuring proper addressing, error correction, and wear-leveling.

Detailed Application Field Plans

MT29F1T08CMHBBJ4-3R:B finds applications in various fields, including: 1. Mobile devices: Smartphones, tablets, portable media players. 2. Computing: Solid-state drives (SSDs), embedded systems, industrial computers. 3. Consumer electronics: Digital cameras, gaming consoles, set-top boxes. 4. Automotive: Infotainment systems, navigation devices, advanced driver-assistance systems (ADAS). 5. Networking: Routers, switches, network storage devices.

Detailed and Complete Alternative Models

1. MT29F1T08CMHBBJ4-3R:A
2. MT29F1T08CMHBBJ4-3R:C
3. MT29F1T08CMHBBJ4-3R:D
4. MT29F1T08CMHBBJ4-3R:E

These alternative models offer similar specifications and functionality to MT29F1T08CMHBBJ4-3R:B, providing options for different application requirements.

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