SST39SF010A-70-4C-NHE-T

Product Overview

Category

The SST39SF010A-70-4C-NHE-T belongs to the category of non-volatile memory devices.

Use

This product is commonly used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The SST39SF010A-70-4C-NHE-T retains stored data even when power is removed.
• High capacity: It has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: The device offers a fast access time of 70 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The SST39SF010A-70-4C-NHE-T is available in a compact surface-mount package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The SST39SF010A-70-4C-NHE-T is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Supply voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Data retention: 10 years
• Endurance: 100,000 write cycles

Detailed Pin Configuration

The SST39SF010A-70-4C-NHE-T has a total of 32 pins, which are assigned specific functions. Here is the detailed pin configuration:

1. VCC - Power supply voltage
2. A0-A16 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Reset/programming
8. VSS - Ground

Functional Features

• Easy integration: The SST39SF010A-70-4C-NHE-T can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: The device supports a standard parallel interface, making it compatible with various microcontrollers and processors.
• Sector erase capability: The memory can be erased in sectors, allowing selective data modification.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Easy integration into existing systems reduces development time.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Erasing data requires sector-level operations, which may be less flexible for certain applications.

Working Principles

The SST39SF010A-70-4C-NHE-T utilizes flash memory technology to store data. It consists of floating-gate transistors that can trap or release electrical charges, representing binary data (0s and 1s). When data is written, the charges are trapped in the floating gates, and when data is read, the presence or absence of charges is detected.

Detailed Application Field Plans

The SST39SF010A-70-4C-NHE-T finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Here are some alternative models that offer similar functionality to the SST39SF010A-70-4C-NHE-T: - AT29C010A-12PC (Atmel) - M29F010B-70K6 (STMicroelectronics) - W27C010-70Z (Winbond)

These alternative models provide comparable storage capacity, access time, and features to the SST39SF010A-70-4C-NHE-T.

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