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IPW65R019C7FKSA1
Product Overview
Category
The IPW65R019C7FKSA1 belongs to the category of power MOSFETs.
Use
It is used for high-voltage applications in various electronic circuits and systems.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The IPW65R019C7FKSA1 is typically available in a TO-247 package.
Essence
This power MOSFET is essential for efficient power management and control in electronic devices.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 42A
- Power Dissipation (PD): 300W
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(on)): 0.19Ω
Detailed Pin Configuration
The IPW65R019C7FKSA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability for robust performance
- Low input capacitance for improved efficiency
- Fast switching speed for rapid response in power control applications
Advantages
- Suitable for high-voltage applications
- Efficient power management due to low on-resistance
- Fast switching speed enhances system responsiveness
Disadvantages
- May require additional circuitry for driving the gate due to high gate-source voltage
Working Principles
The IPW65R019C7FKSA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IPW65R019C7FKSA1 is commonly used in: - Switching power supplies - Motor control systems - Inverters - LED lighting applications
Detailed and Complete Alternative Models
Some alternative models to the IPW65R019C7FKSA1 include: - IPW60R190C6 - IPW60R099C6 - IPW60R045C6
In conclusion, the IPW65R019C7FKSA1 is a high-voltage power MOSFET with characteristics that make it suitable for a wide range of electronic applications, particularly those requiring efficient power management and control.
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Énumérez 10 questions et réponses courantes liées à l'application de IPW65R019C7FKSA1 dans les solutions techniques
What is the maximum drain-source voltage of IPW65R019C7FKSA1?
- The maximum drain-source voltage of IPW65R019C7FKSA1 is 650V.
What is the continuous drain current rating of IPW65R019C7FKSA1?
- The continuous drain current rating of IPW65R019C7FKSA1 is 19A.
What is the typical on-resistance of IPW65R019C7FKSA1?
- The typical on-resistance of IPW65R019C7FKSA1 is 0.19 ohms.
What is the gate-source threshold voltage of IPW65R019C7FKSA1?
- The gate-source threshold voltage of IPW65R019C7FKSA1 is typically 2.5V.
What are the recommended operating temperature range for IPW65R019C7FKSA1?
- The recommended operating temperature range for IPW65R019C7FKSA1 is -55°C to 150°C.
Is IPW65R019C7FKSA1 suitable for high-frequency switching applications?
- Yes, IPW65R019C7FKSA1 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
Does IPW65R019C7FKSA1 require a heat sink for certain applications?
- Depending on the specific application and power dissipation, a heat sink may be required for IPW65R019C7FKSA1 to ensure proper thermal management.
What are some common applications for IPW65R019C7FKSA1 in technical solutions?
- IPW65R019C7FKSA1 is commonly used in power supplies, motor control, DC-DC converters, and automotive systems.
Can IPW65R019C7FKSA1 be used in parallel to increase current handling capability?
- Yes, IPW65R019C7FKSA1 can be used in parallel to increase current handling capability in certain designs.
Are there any important considerations for driving IPW65R019C7FKSA1 in a circuit?
- It's important to ensure proper gate drive voltage and current to fully enhance the performance of IPW65R019C7FKSA1 in a circuit. Additionally, attention should be given to minimizing parasitic inductance and capacitance in the layout for optimal performance.