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IPI040N06N3GXKSA1
Product Overview
Category
The IPI040N06N3GXKSA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and power applications.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
Package
The IPI040N06N3GXKSA1 is typically available in a TO-220 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 80A
- On-State Resistance (RDS(on)): 4mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 110nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPI040N06N3GXKSA1 features a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High current-handling capacity
- Low power dissipation
- Enhanced thermal performance
- Compatibility with various driving circuits
Advantages and Disadvantages
Advantages
- Low on-state resistance reduces power losses
- High current-carrying capability enables efficient power delivery
- Fast switching speed enhances overall system performance
Disadvantages
- Sensitive to static electricity and voltage spikes
- Requires careful handling during installation and operation
Working Principles
The MOSFET operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow through it.
Detailed Application Field Plans
The IPI040N06N3GXKSA1 is widely used in: - Switch-mode power supplies - Motor control circuits - Inverters and converters - Audio amplifiers - LED lighting systems
Detailed and Complete Alternative Models
- IRF3205
- FDP8870
- STP80NF55-06
In conclusion, the IPI040N06N3GXKSA1 power MOSFET offers high-performance characteristics suitable for a wide range of power applications, despite its sensitivity to static electricity and voltage spikes. Its low on-state resistance and high current-carrying capability make it an ideal choice for efficient power management and control in various electronic systems.
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Énumérez 10 questions et réponses courantes liées à l'application de IPI040N06N3GXKSA1 dans les solutions techniques
What is the maximum drain-source voltage for IPI040N06N3GXKSA1?
- The maximum drain-source voltage for IPI040N06N3GXKSA1 is 60V.
What is the continuous drain current rating of IPI040N06N3GXKSA1?
- The continuous drain current rating of IPI040N06N3GXKSA1 is 100A.
What is the on-state resistance (RDS(on)) of IPI040N06N3GXKSA1?
- The on-state resistance (RDS(on)) of IPI040N06N3GXKSA1 is typically 4mΩ at VGS = 10V.
What is the gate threshold voltage of IPI040N06N3GXKSA1?
- The gate threshold voltage of IPI040N06N3GXKSA1 is typically 2V.
Is IPI040N06N3GXKSA1 suitable for automotive applications?
- Yes, IPI040N06N3GXKSA1 is qualified according to AEC Q101 and is suitable for automotive applications.
What is the operating temperature range of IPI040N06N3GXKSA1?
- The operating temperature range of IPI040N06N3GXKSA1 is -55°C to 175°C.
Does IPI040N06N3GXKSA1 have built-in ESD protection?
- Yes, IPI040N06N3GXKSA1 has built-in ESD protection.
What package type is IPI040N06N3GXKSA1 available in?
- IPI040N06N3GXKSA1 is available in a TO-220 package.
Can IPI040N06N3GXKSA1 be used in high-frequency switching applications?
- Yes, IPI040N06N3GXKSA1 is suitable for high-frequency switching applications.
What are some typical applications for IPI040N06N3GXKSA1?
- Typical applications for IPI040N06N3GXKSA1 include motor control, power supplies, and DC-DC converters.