Voir les spécifications pour les détails du produit.
IPD80R1K4CEATMA1
Product Overview
Category
The IPD80R1K4CEATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power applications such as motor control, power supplies, and inverters.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPD80R1K4CEATMA1 is available in a TO-252 package.
Essence
This MOSFET is designed to provide efficient power management and control in various electronic systems.
Packaging/Quantity
It is typically packaged in reels with a quantity of 2500 pieces per reel.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 1.4A
- On-Resistance (RDS(on)): 3.5Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 15nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPD80R1K4CEATMA1 has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)
Functional Features
- High voltage capability allows for use in demanding applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in control systems.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications.
- Low on-resistance for improved efficiency.
- Fast switching speed for responsive performance.
Disadvantages
- Limited continuous drain current compared to higher-rated MOSFETs.
- Higher gate charge compared to some competing models.
Working Principles
The IPD80R1K4CEATMA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD80R1K4CEATMA1 is well-suited for use in the following applications: - Motor control systems for industrial equipment - Power supply units in telecommunications infrastructure - Inverters for renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPD80R1K4CEATMA1 include: - IPD60R1K4CE - Similar characteristics with a lower voltage rating - IPD90R1K4CE - Higher voltage capability with comparable specifications - IPD80R2K0CE - Higher continuous drain current with slightly higher on-resistance
In conclusion, the IPD80R1K4CEATMA1 is a high-voltage power MOSFET with excellent characteristics for various high-power applications, despite some limitations in current handling and gate charge. Its fast switching speed and low on-resistance make it a valuable component in power management and control systems.
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Énumérez 10 questions et réponses courantes liées à l'application de IPD80R1K4CEATMA1 dans les solutions techniques
What is the maximum drain-source voltage of IPD80R1K4CEATMA1?
- The maximum drain-source voltage of IPD80R1K4CEATMA1 is 800V.
What is the typical on-state resistance of IPD80R1K4CEATMA1?
- The typical on-state resistance of IPD80R1K4CEATMA1 is 1.4 mΩ.
What is the maximum continuous drain current of IPD80R1K4CEATMA1?
- The maximum continuous drain current of IPD80R1K4CEATMA1 is 80A.
What are the typical gate charge characteristics of IPD80R1K4CEATMA1?
- The typical gate charge characteristics of IPD80R1K4CEATMA1 are Qg = 160nC, Qgs = 40nC, and Qgd = 120nC.
What is the typical input capacitance of IPD80R1K4CEATMA1?
- The typical input capacitance of IPD80R1K4CEATMA1 is 6800pF.
What is the recommended operating temperature range for IPD80R1K4CEATMA1?
- The recommended operating temperature range for IPD80R1K4CEATMA1 is -55°C to 150°C.
Does IPD80R1K4CEATMA1 have built-in ESD protection?
- Yes, IPD80R1K4CEATMA1 has built-in ESD protection.
What are the typical applications for IPD80R1K4CEATMA1?
- Typical applications for IPD80R1K4CEATMA1 include motor control, power supplies, and DC-DC converters.
Is IPD80R1K4CEATMA1 RoHS compliant?
- Yes, IPD80R1K4CEATMA1 is RoHS compliant.
What package type does IPD80R1K4CEATMA1 come in?
- IPD80R1K4CEATMA1 comes in a TO-252-3 package.