The IPD60R460CEATMA1 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
The IPD60R460CEATMA1 has three pins: 1. Gate (G): Input for controlling the switching operation. 2. Drain (D): Connects to the load or power supply. 3. Source (S): Connected to the ground or return path.
The IPD60R460CEATMA1 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET switches on, allowing current to flow through.
The IPD60R460CEATMA1 finds applications in various fields, including: - Power Supplies: Used in switch-mode power supplies for efficient voltage regulation. - Motor Control: Employed in motor drive circuits for controlling speed and direction. - Lighting: Utilized in LED driver circuits for efficient power management.
Some alternative models to the IPD60R460CEATMA1 include: - IPD60R460CE: Similar specifications with minor variations in performance. - IPD60R500CE: Higher current rating with comparable voltage and on-resistance characteristics.
In conclusion, the IPD60R460CEATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for various electronic applications.
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What is the on-state resistance of IPD60R460CEATMA1?
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What are the typical applications for IPD60R460CEATMA1?
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Is IPD60R460CEATMA1 suitable for automotive applications?
Does IPD60R460CEATMA1 have built-in protection features?
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Can IPD60R460CEATMA1 be used in high-frequency switching applications?