IPD046N08N5ATMA1

Product Overview

Category

The IPD046N08N5ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

• High power handling capability
• Low on-state resistance
• Fast switching speed
• Low gate drive power requirement

Package

The IPD046N08N5ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 80V
• Continuous Drain Current (ID): 50A
• On-State Resistance (RDS(on)): 4.6mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 38nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD046N08N5ATMA1 follows the standard pin configuration for a power MOSFET: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

• High current-carrying capability
• Low conduction losses
• Suitable for high-frequency switching applications
• Enhanced thermal performance

Advantages

• Efficient power handling
• Reduced heat dissipation
• Improved system reliability
• Suitable for demanding industrial and automotive applications

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to electrostatic discharge (ESD)

Working Principles

The IPD046N08N5ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPD046N08N5ATMA1 is widely used in the following applications: - Motor control systems - Power supplies - DC-DC converters - Inverters for solar and automotive systems - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the IPD046N08N5ATMA1 include: - IPD036N08N5ATMA1 - IPD056N08N5ATMA1 - IPD046N10N5ATMA1 - IPD046N08N5ATM

In conclusion, the IPD046N08N5ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of applications, despite its higher cost and sensitivity to ESD.

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