Infineon Technologies
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IPB80N07S405ATMA1
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IPB80N07S405ATMA1

Product Overview

Category

The IPB80N07S405ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power loss

Package

The IPB80N07S405ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 75V
  • Continuous Drain Current (ID): 80A
  • On-State Resistance (RDS(on)): 4.5mΩ
  • Power Dissipation (PD): 300W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N07S405ATMA1 has a standard pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Robustness against voltage spikes and transients

Advantages

  • Suitable for high-current applications
  • Reduced power dissipation
  • Improved system reliability
  • Enhanced thermal management

Disadvantages

  • Higher cost compared to standard MOSFETs
  • May require additional circuitry for optimal performance in some applications

Working Principles

The IPB80N07S405ATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

  • Motor control systems
  • Power supplies
  • Inverters
  • Battery management systems
  • Industrial automation

Detailed and Complete Alternative Models

  • IRF840
  • FDP8870
  • STP80NF03L
  • AUIRFN8403

In conclusion, the IPB80N07S405ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of applications in various industries.

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Énumérez 10 questions et réponses courantes liées à l'application de IPB80N07S405ATMA1 dans les solutions techniques

  1. What is the maximum drain-source voltage of IPB80N07S405ATMA1?

    • The maximum drain-source voltage of IPB80N07S405ATMA1 is 75V.

  2. What is the continuous drain current rating of IPB80N07S405ATMA1?

    • The continuous drain current rating of IPB80N07S405ATMA1 is 80A.

  3. What is the on-resistance of IPB80N07S405ATMA1?

    • The on-resistance of IPB80N07S405ATMA1 is typically 7.5mΩ at Vgs=10V.

  4. Can IPB80N07S405ATMA1 be used in automotive applications?

    • Yes, IPB80N07S405ATMA1 is designed for use in automotive applications.

  5. What is the operating temperature range of IPB80N07S405ATMA1?

    • The operating temperature range of IPB80N07S405ATMA1 is -55°C to 175°C.

  6. Does IPB80N07S405ATMA1 have built-in ESD protection?

    • Yes, IPB80N07S405ATMA1 features built-in ESD protection.

  7. What type of package does IPB80N07S405ATMA1 come in?

    • IPB80N07S405ATMA1 comes in a TO-263-7 package.

  8. Is IPB80N07S405ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB80N07S405ATMA1 is suitable for high-frequency switching applications.

  9. What gate-source voltage is required to fully enhance IPB80N07S405ATMA1?

    • A gate-source voltage of 10V is typically required to fully enhance IPB80N07S405ATMA1.

  10. Can IPB80N07S405ATMA1 be used in power supply and motor control applications?

    • Yes, IPB80N07S405ATMA1 is suitable for power supply and motor control applications.