S30ML02GP50TFI013

Product Overview

Category

S30ML02GP50TFI013 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size

Package

S30ML02GP50TFI013 is packaged in a small form factor, typically in a surface mount package (SMP).

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

S30ML02GP50TFI013 is usually sold in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory capacity: 2 gigabits (256 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 3.3 volts
• Data transfer rate: Up to 50 megabits per second
• Operating temperature range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. CS: Chip select input
4. SCK: Serial clock input
5. SI: Serial data input
6. SO: Serial data output
7. WP: Write protect input
8. HOLD: Hold input

Functional Features

• Fast read and write operations
• Sector erase and program capability
• Block protection options
• Software and hardware write protection
• High reliability and endurance
• Error correction code (ECC) support

Advantages

• High-speed data access enables faster system performance.
• Non-volatile memory retains data even when power is disconnected.
• Low power consumption prolongs battery life in portable devices.
• Compact size allows for integration into small form factor devices.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit of storage compared to traditional hard drives.
• Limited write endurance compared to some other non-volatile memory technologies.

Working Principles

S30ML02GP50TFI013 utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These trapped charges represent binary information (0s and 1s). The data can be read by applying appropriate voltages to the memory cells and sensing the resulting electrical currents. Writing data involves applying high voltages to the memory cells to modify the charge levels within the floating gates.

Detailed Application Field Plans

S30ML02GP50TFI013 finds applications in various electronic devices, including: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Set-top boxes - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

1. S30ML02GP50TFI014: Similar specifications with increased memory capacity (4 gigabits).
2. S30ML04GP50TFI013: Similar specifications with doubled memory capacity (4 gigabits).
3. S30ML08GP50TFI013: Similar specifications with quadrupled memory capacity (8 gigabits).

These alternative models provide options for different storage requirements while maintaining compatibility with the same interface and pin configuration.

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