S29GL064N90TFA020

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory for reliable data storage
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Density: 64 Megabits (8 Megabytes)
• Organization: 8-bit parallel
• Voltage: 2.7V - 3.6V
• Access Time: 90 nanoseconds
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL064N90TFA020 has a total of 48 pins. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector erase architecture for efficient memory management
• Built-in hardware and software protection mechanisms
• Low power consumption during standby mode
• Automatic program and erase algorithms for simplified operation

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read and write speeds - Reliable data retention - Low power consumption - Efficient memory management

Disadvantages: - Limited endurance (100,000 program/erase cycles) - Relatively high cost compared to other memory options

Working Principles

The S29GL064N90TFA020 is based on NOR flash memory technology. It utilizes a grid of memory cells that can be electrically programmed and erased. When data is written, the memory cells are charged or discharged to represent binary values. Reading data involves detecting the voltage levels in the memory cells.

Detailed Application Field Plans

The S29GL064N90TFA020 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras
2. Automotive: Infotainment systems, navigation systems
3. Industrial: Embedded systems, control units
4. Networking: Routers, switches
5. Medical: Patient monitoring devices, diagnostic equipment

Detailed and Complete Alternative Models

1. S29GL032N90TFI040

   • Density: 32 Megabits (4 Megabytes)
   • Organization: 8-bit parallel
   • Voltage: 2.7V - 3.6V
   • Access Time: 90 nanoseconds

2. S29GL128N10TFI010

   • Density: 128 Megabits (16 Megabytes)
   • Organization: 16-bit parallel
   • Voltage: 2.7V - 3.6V
   • Access Time: 10 nanoseconds

3. S29GL256P11TFI010

   • Density: 256 Megabits (32 Megabytes)
   • Organization: 16-bit parallel
   • Voltage: 2.7V - 3.6V
   • Access Time: 10 nanoseconds

4. S29GL512P11TFI010

   • Density: 512 Megabits (64 Megabytes)
   • Organization: 16-bit parallel
   • Voltage: 2.7V - 3.6V
   • Access Time: 10 nanoseconds

5. S29GL01GP11TFI010

   • Density: 1 Gigabit (128 Megabytes)
   • Organization: 16-bit parallel
   • Voltage: 2.7V - 3.6V
   • Access Time: 10 nanoseconds

Note: The above alternative models are just a few examples and there are many more available in the market.

This concludes the encyclopedia entry for the S29GL064N90TFA020 flash memory.