S29GL064N11FFIV12

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for reliable data storage
• Packaging/Quantity: Available in various packaging options, typically sold in reels or trays

Specifications

• Model: S29GL064N11FFIV12
• Memory Type: NOR Flash
• Capacity: 64 Megabits (8 Megabytes)
• Voltage: 3.0V - 3.6V
• Access Time: 110 ns
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: 100,000 program/erase cycles

Detailed Pin Configuration

The S29GL064N11FFIV12 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. DQ0
27. DQ1
28. DQ2
29. DQ3
30. DQ4
31. DQ5
32. DQ6
33. DQ7
34. WE#
35. CE#
36. OE#
37. BYTE#
38. RY/BY#
39. RESET#
40. WP#
41. VSS
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in hardware and software protection mechanisms
• Low power consumption
• Reliable operation in harsh environments
• Easy integration with various electronic devices

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast read/write speeds for quick data access - Non-volatile memory retains data even when power is disconnected - Robust design ensures data integrity and reliability - Suitable for a wide range of applications

Disadvantages: - Relatively higher cost compared to other memory options - Limited endurance compared to some newer memory technologies - Requires additional circuitry for interfacing with microcontrollers or processors

Working Principles

The S29GL064N11FFIV12 utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the memory controller applies appropriate voltages to the memory cells, allowing the trapped charge to be sensed as binary information.

During programming, a high voltage is applied to the control gate, causing electrons to tunnel through a thin oxide layer and become trapped in the floating gate. Erasing is achieved by applying a higher voltage that removes the trapped charge from the floating gate.

Detailed Application Field Plans

The S29GL064N11FFIV12 is widely used in various electronic devices that require reliable data storage and retrieval. Some of its application fields include:

1. Embedded Systems: Used as a boot memory or for firmware storage in microcontrollers and embedded systems.
2. Consumer Electronics: Found in digital cameras, set-top boxes, gaming consoles, and other consumer devices for storing user data and firmware.
3. Automotive: Used in automotive electronics for storing critical data, such as engine control units (ECUs) and infotainment systems.
4. Industrial Control Systems: Employed in industrial automation, robotics, and control systems for data logging and program storage.
5. Networking Equipment: Utilized in routers, switches, and network appliances for firmware storage and configuration data.

Detailed and Complete Alternative Models

1. S29GL032N11FFIV10: 32 Megabit NOR Flash Memory with similar specifications and pin configuration.
2. S29GL128N11FFIV20: 128 Megabit NOR Flash Memory with higher capacity and similar characteristics.
3. S29GL256N11FFIV30: 256 Megabit NOR Flash Memory with even higher capacity and comparable performance.

These alternative models offer different capacity options while maintaining