S29GL01GP11TFCR20D

Product Overview

Category

S29GL01GP11TFCR20D belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a large storage capacity, typically measured in gigabytes (GB).
• Fast access times: Allows for quick retrieval and storage of data.
• Compact size: Comes in a small form factor, making it suitable for integration into compact electronic devices.
• Reliable: Provides robust data storage with minimal risk of data loss or corruption.
• Low power consumption: Consumes less power compared to other storage technologies.

Package

S29GL01GP11TFCR20D is available in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of S29GL01GP11TFCR20D lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities for industrial applications.

Specifications

• Storage capacity: 1 gigabyte (GB)
• Interface: Parallel
• Supply voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Data transfer rate: Up to 50 megabytes per second (MB/s)
• Erase/program cycles: 100,000 minimum

Detailed Pin Configuration

The pin configuration of S29GL01GP11TFCR20D is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte control
8. RY/BY#: Ready/busy status
9. WP#/ACC: Write protect/access protection

Functional Features

• Block erase: Allows for erasing large blocks of data simultaneously, enhancing efficiency.
• Page program: Enables programming of individual memory pages, providing flexibility in data storage.
• Read and write operations: Supports high-speed read and write operations for efficient data access.
• Error correction code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear leveling: Implements wear leveling techniques to distribute data evenly across memory cells, prolonging the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access times
• Compact size
• Low power consumption
• Reliable data storage

Disadvantages

• Limited erase/program cycles
• Relatively higher cost compared to other storage technologies

Working Principles

S29GL01GP11TFCR20D utilizes a combination of floating-gate transistors and semiconductor memory cells to store and retrieve data. When data is written, electrical charges are trapped in the floating gates, representing binary information. During read operations, the stored charges are detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

S29GL01GP11TFCR20D finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

• S29GL512P11TFI010: 512 megabyte (MB) flash memory with similar specifications
• S29GL02GP11TFCR20D: 2 gigabyte (GB) flash memory with similar characteristics
• S29GL04GP11TFCR20D: 4 gigabyte (GB) flash memory offering higher storage capacity

These alternative models can be considered based on specific requirements and desired storage capacities.

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