IS29GL128S-10DHB013

Product Overview

Category

IS29GL128S-10DHB013 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• High storage capacity: The IS29GL128S-10DHB013 offers a storage capacity of 128 gigabits (16 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a speed of 10 nanoseconds, this flash memory device ensures quick and efficient data transfer.
• Reliable performance: The IS29GL128S-10DHB013 is known for its high reliability and durability, making it suitable for long-term data storage.
• Low power consumption: This flash memory device is designed to consume minimal power, resulting in extended battery life for portable devices.
• Compact package: The IS29GL128S-10DHB013 comes in a small form factor package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The IS29GL128S-10DHB013 is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Manufacturer: Integrated Silicon Solution Inc. (ISSI)
• Model: IS29GL128S-10DHB013
• Memory Type: Flash memory
• Capacity: 128 gigabits (16 gigabytes)
• Access Time: 10 nanoseconds
• Interface: Parallel
• Supply Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS29GL128S-10DHB013 has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. RE#
48. VSS

Functional Features

• Erase and Program Operations: The IS29GL128S-10DHB013 supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: This flash memory device offers block locking features to protect specific sectors from accidental modification or erasure.
• Read and Write Protection: The IS29GL128S-10DHB013 provides read and write protection mechanisms to prevent unauthorized access or modification of stored data.
• Error Correction Code (ECC): ECC functionality is integrated into this flash memory device to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces
• Relatively higher cost compared to lower-capacity flash memory options

Working Principles

The IS29GL128S-10DHB013 operates based on the principles of flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of information. These cells can be electrically programmed and erased, allowing for non-volatile data storage.

When data is written to the memory, the appropriate voltage levels are applied to the specific memory cells, altering their electrical state. Reading the stored data involves detecting the electrical state of the memory cells and interpreting it as binary information.

Detailed Application Field Plans

The IS29GL128S-10DHB013 finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality to the IS29