CY7C1513JV18-250BZXC

Product Overview

Category

CY7C1513JV18-250BZXC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly utilized in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1513JV18-250BZXC offers fast access times and low latency, making it suitable for time-critical applications.
• Large Capacity: With a capacity of 1,048,576 bits (128K x 8), this chip provides ample storage space for data-intensive tasks.
• Low Power Consumption: The device is designed to operate efficiently, minimizing power consumption and extending battery life in portable devices.
• Wide Temperature Range: It can function reliably across a wide temperature range, making it suitable for both commercial and industrial applications.

Package

The CY7C1513JV18-250BZXC is available in a compact and industry-standard BGA (Ball Grid Array) package. This package ensures easy integration into circuit boards and provides robust protection against environmental factors.

Essence

The essence of CY7C1513JV18-250BZXC lies in its ability to provide high-speed and reliable data storage, enabling efficient data processing in various electronic systems.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for production-level requirements.

Specifications

• Organization: 128K x 8
• Voltage Supply: 2.5V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA

Detailed Pin Configuration

The CY7C1513JV18-250BZXC has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. VDD
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. A8
21. A9
22. A10
23. A11
24. A12
25. A13
26. A14
27. A15
28. A16
29. A17
30. A18
31. A19
32. A20
33. A21
34. A22
35. A23
36. A24
37. A25
38. A26
39. A27
40. A28
41. A29
42. A30
43. A31
44. VSS
45. WE#
46. OE#
47. CE#
48. VDDQ

Functional Features

• High-Speed Operation: The CY7C1513JV18-250BZXC offers fast access times, allowing for quick data retrieval and processing.
• Easy Integration: The chip's compact package and standard pin configuration facilitate seamless integration into various electronic systems.
• Low Power Consumption: With its efficient design, the device minimizes power consumption, making it suitable for battery-powered applications.
• Reliable Performance: The synchronous SRAM technology ensures reliable operation and data integrity even in demanding environments.

Advantages and Disadvantages

Advantages

• High-performance data storage solution
• Large capacity for data-intensive applications
• Wide temperature range for versatile usage
• Low power consumption for energy efficiency

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited availability of alternative models

Working Principles

The CY7C1513JV18-250BZXC operates based on the principles of synchronous SRAM. It utilizes a clock signal to synchronize data transfers between the memory array and the external system. The chip stores data in a volatile manner, meaning that the stored information is lost when power is removed.

Detailed Application Field Plans

The CY7C1513JV18-250BZXC finds applications in various fields, including:

1. Computer Systems: Used as cache memory or main memory in high-performance computers.
2. Networking Equipment: Enables fast data processing and routing in routers, switches, and network appliances.
3. Telecommunications Systems: Facilitates efficient data storage and retrieval in telecommunication infrastructure equipment.
4. Industrial Automation: Supports real-time